journal article·2024-12Open access

Broad‐Band Photoelectrochemical Photodetector Based on Ternary Sb2Te2Se Nanosheets

Lude Wang, Mingli Qin, Artem V. Kuklin, Jie Li, Yiming Zhao, Jian Zhang, Jiale Ai, Zhi Chen, Han Zhang, Hans Ågren, Lingfeng Gao

Advanced Optical Materials· Volume 12· Issue 34

Abstract

Abstract As a novel V‐VI ternary topological insulator, Sb2Te2Se, has recently garnered great attention that has motivated both theoretical and experimental investigations. Numerous simulations have proved that 2D ternary Sb2Te2Se is a promising candidate for various optoelectronic devices. However, there are only a few experimental reports focusing on 2D Sb2Te2Se‐based devices due to the lack of a facile synthetic approach. Herein, few‐layered 2D Sb2Te2Se nanosheets are prepared by efficient liquid phase exfoliation and their photoresponse performance is systematically investigated using a photoelectrochemical type photodetector. As revealed, the 2D Sb2Te2Se‐based photodetector exhibits a significant photoresponse in alkaline electrolytes with excellent long‐term cycling stability (decrement of 3.3% during 15000 cycles). In addition, a wide spectral response ranging from 365 to 700 nm could be achieved, indicating great potential for broad‐band photodetection. With this initial exploration work, it is anticipated that 2D ternary Sb2Te2Se materials can be developed for future optoelectronic devices with high performance.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · 2D Materials and Applications · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Artifcial Intelligence and Information Technology Nanjing University of Chinese Medicine No. 138 Xianling Rd Nanjing 210023 P. R. China

College of Material Chemistry and Chemical Engineering Key Laboratory of Organosilicon Chemistry and Material Technology Ministry of Education Key Laboratory of Organosilicon Material Technology Hangzhou Normal University Hangzhou Zhejiang 311121 P. R. China

Department of Physics and Astronomy Uppsala University Box 516 Uppsala SE‐751 20 Sweden

Jiangsu Yangnong Chemical Group Co., Ltd Yangzhou 225009 P. R. China

Institute of Industrial Catalysis College of Chemical Engineering Zhejiang University of Technology Hangzhou 310014 P. R. China

Institute of Materials Science and Devices School of Materials Science and Engineering Suzhou University of Science and Technology Suzhou 215009 P. R. China

Institute of Microscale Optoelectronics College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China

Funding

Natural Science Foundation of Zhejiang Province · National Natural Science Foundation of China

References (45)

Show source-provided references
1. 10.1038/nature0891610.1038/nature08916 ↗
2. 10.1038/natrevmats.2017.4910.1038/natrevmats.2017.49 ↗
3. 10.1126/science.117303410.1126/science.1173034 ↗
4. 10.1039/C5TC01772F10.1039/C5TC01772F ↗
5. 10.1039/C7TA06971E10.1039/C7TA06971E ↗
6. 10.1016/j.flatc.2022.10039410.1016/j.flatc.2022.100394 ↗
7. 10.1039/C9CP02098E10.1039/C9CP02098E ↗
8. 10.1002/aelm.20190081310.1002/aelm.201900813 ↗
9. 10.1002/inf2.1200410.1002/inf2.12004 ↗
10. 10.1016/j.mattod.2022.10.02210.1016/j.mattod.2022.10.022 ↗
11. 10.1002/adma.20200412910.1002/adma.202004129 ↗
12. 10.1038/nature1538710.1038/nature15387 ↗
13. 10.1021/acsnano.0c0760810.1021/acsnano.0c07608 ↗
14. 10.1021/acsanm.2c0312510.1021/acsanm.2c03125 ↗
15. 10.1016/j.mtnano.2023.10034910.1016/j.mtnano.2023.100349 ↗
16. 10.1038/srep4541310.1038/srep45413 ↗
17. 10.1038/s41598-017-02102-710.1038/s41598-017-02102-7 ↗
18. 10.1039/C7RA06151J10.1039/C7RA06151J ↗
19. 10.1021/acsami.1c2446110.1021/acsami.1c24461 ↗
20. 10.1107/S056774087400472910.1107/S0567740874004729 ↗
21. 10.1016/j.materresbull.2019.11073310.1016/j.materresbull.2019.110733 ↗
22. 10.1016/j.jallcom.2019.04.22610.1016/j.jallcom.2019.04.226 ↗
23. 10.1021/acs.jpcc.8b0859610.1021/acs.jpcc.8b08596 ↗
24. 10.1021/nl501658d10.1021/nl501658d ↗
25. 10.1038/srep0667710.1038/srep06677 ↗
26. 10.1063/1.45851710.1063/1.458517 ↗
27. 10.1021/jp992783k10.1021/jp992783k ↗
28. 10.1038/371683a010.1038/371683a0 ↗
29. 10.1088/1361-648X/ab7fd810.1088/1361-648X/ab7fd8 ↗
30. 10.1103/PhysRevB.109.16520510.1103/PhysRevB.109.165205 ↗
31. 10.1016/j.commatsci.2020.10958810.1016/j.commatsci.2020.109588 ↗
32. 10.1016/j.nantod.2023.10199910.1016/j.nantod.2023.101999 ↗
33. 10.1002/adma.20100431110.1002/adma.201004311 ↗
34. 10.1002/adfm.20160683410.1002/adfm.201606834 ↗
35. 10.1088/1361-6528/aafc0f10.1088/1361-6528/aafc0f ↗
36. 10.1002/adfm.20170583310.1002/adfm.201705833 ↗
37. 10.1002/smll.20210568310.1002/smll.202105683 ↗
38. 10.1002/smll.20190323310.1002/smll.201903233 ↗
39. 10.1002/smtd.20190034910.1002/smtd.201900349 ↗
40. 10.1039/C9NH00805E10.1039/C9NH00805E ↗
41. 10.1039/D0TC01283A10.1039/D0TC01283A ↗
42. 10.1021/acs.inorgchem.1c0302310.1021/acs.inorgchem.1c03023 ↗
43. 10.1002/adom.20230225010.1002/adom.202302250 ↗
44. 10.1002/adfm.20221358310.1002/adfm.202213583 ↗
45. 10.1002/adfm.20240575210.1002/adfm.202405752 ↗