A CMOS‐Compatible Fabrication Approach for High‐Performance Perovskite Photodetector Arrays

Abstract Lead halide perovskites (LHPs) have attracted significant attention for their exceptional optoelectronic properties, positioning them as prime candidates for next‐generation electronics such as photodetectors (PDs), lasers, light‐emitting diodes (LEDs), and memristors. However, integrating these materials into device architectures with CMOS‐compatible technologies in a simple manner remains a critical challenge. This study introduces a universal method leveraging standard lithographic patterning to fabricate high‐performance LHP PDs for red (R), green (G), and blue (B) color detection separately. Through optimization of the device stack and etching conditions, perovskite PDs are pixelated using a one‐step lithography and pulsed argon (Ar) milling process. The resulting devices exhibit typical perovskite PD responsivity (0.3 A W ⁻¹ ), low dark current density (less than 10 ⁻⁶ mA cm ⁻² ), high detectivity (over 10 ¹³ Jones), and short fall time (sub‐20 ns without bias). This approach not only enhances device performance but also paves the way for scalable production of perovskite‐based optoelectronic devices. The versatility and effectiveness of this method highlight its potential for broad applicability in CMOS‐compatible perovskite‐based image sensor technology.