journal article·2022-07

Bandgap Engineering of Ternary ε‐InSe1−xSx and ε‐InSe1−yTey Single Crystals for High‐Performance Electronics and Optoelectronics

Qiaoyan Hao, Huan Yi, Jidong Liu, Yi Wang, Jiewei Chen, Xinmao Yin, Chi Sin Tang, Dianyu Qi, Haibo Gan, Andrew T. S. Wee, Yang Chai, Wenjing Zhang

Advanced Optical Materials· Volume 10· Issue 13
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Abstract

Abstract Alloying offers an efficient strategy to tune the bandgap of two‐dimensional (2D) layered materials, enabling them to tailor the optical and electronic attributes without compromising the structural integrity. Here the authors report the synthesis of a series of ternary InSe1−xSx and InSe1−yTey alloys possessing ε‐polymorph and single crystalline structure. Both the photoluminescence and Raman spectra of multilayer InSe1−xSx and InSe1−yTey demonstrate that an effective modulation of bandgap and concomitant optical properties is achieved by tuning the alloy compositions, consistent with density functional theory calculations. Field‐effect transistors fabricated from the multilayer alloys on SiO2 dielectric substrates display electron field‐effect mobilities of up to ≈127 cm2 V−1 s−1. All the multilayer alloy devices show a high current on/off ratio of ≈108. When fabricated into photodetectors, multilayer InSe0.9S0.1 and InSe0.9Te0.1 exhibit maximum photoresponsivities of 5.4 × 105 and 7.7 × 104 A W−1, respectively. Moreover, the InSe1−yTey alloys are able to expand the photoresponse range into 1250 nm due to the bandgap narrowing upon Te alloying. This work sheds light on rationally designing 2D layered InSe with tunable bandgaps via alloying, and demonstrates their promising applications in electronics and optoelectronics.
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Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 China

College of Science Civil Aviation University of China Tianjin 300300 China

Department of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR China

Department of Engineering Physics Tsinghua University Beijing 100084 China

Physics Department Shanghai Key Laboratory of High Temperature Superconductors Shanghai University Shanghai 200444 China

Institute of Materials Research and Engineering A*STAR (Agency for Science Technology and Research) 2 Fusionopolis Way Singapore 138634 Singapore

Singapore Synchrotron Light Source National University of Singapore Singapore 117603 Singapore

Department of Physics National University of Singapore Singapore 117551 Singapore

Funding

Science, Technology and Innovation Commission of Shenzhen Municipality · Department of Education of Guangdong Province · Shenzhen Peacock Plan

References (47)

Show source-provided references
1. 10.1038/nphoton.2013.24110.1038/nphoton.2013.241 ↗
2. 10.1038/nphoton.2010.4010.1038/nphoton.2010.40 ↗
3. 10.1016/j.mattod.2016.10.00210.1016/j.mattod.2016.10.002 ↗
4. 10.1021/acs.chemrev.6b0055810.1021/acs.chemrev.6b00558 ↗
5. 10.1039/C8CS00318A10.1039/C8CS00318A ↗
6. 10.1038/natrevmats.2017.3310.1038/natrevmats.2017.33 ↗
7. 10.1038/s41928-020-00475-810.1038/s41928-020-00475-8 ↗
8. 10.1002/adma.20160423010.1002/adma.201604230 ↗
9. 10.1039/C4CS00257A10.1039/C4CS00257A ↗
10. 10.1002/adma.20160529910.1002/adma.201605299 ↗
11. 10.1063/1.512348710.1063/1.5123487 ↗
12. 10.1002/admt.20190010810.1002/admt.201900108 ↗
13. 10.1002/inf2.1216010.1002/inf2.12160 ↗
14. 10.1038/nnano.2013.10010.1038/nnano.2013.100 ↗
15. 10.1002/advs.20210303610.1002/advs.202103036 ↗
16. 10.1021/acs.nanolett.6b0481410.1021/acs.nanolett.6b04814 ↗
17. 10.1021/ja500069b10.1021/ja500069b ↗
18. 10.1021/jacs.5b0159410.1021/jacs.5b01594 ↗
19. 10.1002/adma.20160399110.1002/adma.201603991 ↗
20. 10.1002/adom.20200224810.1002/adom.202002248 ↗
21. 10.1002/aelm.20190079410.1002/aelm.201900794 ↗
22. 10.1021/acs.nanolett.5b0049310.1021/acs.nanolett.5b00493 ↗
23. 10.1038/nnano.2016.24210.1038/nnano.2016.242 ↗
24. 10.1002/adma.20130261610.1002/adma.201302616 ↗
25. 10.1007/s12274-014-0516-x10.1007/s12274-014-0516-x ↗
26. 10.1021/nn405036u10.1021/nn405036u ↗
27. 10.1002/adma.20140242710.1002/adma.201402427 ↗
28. 10.1021/nl500817g10.1021/nl500817g ↗
29. 10.1021/acsnano.8b0493110.1021/acsnano.8b04931 ↗
30. 10.1002/cctc.20190044910.1002/cctc.201900449 ↗
31. 10.1002/anie.20151173710.1002/anie.201511737 ↗
32. 10.1088/0953-8984/20/29/29320210.1088/0953-8984/20/29/293202 ↗
33. 10.1021/acs.cgd.7b0175110.1021/acs.cgd.7b01751 ↗
34. 10.1016/j.jallcom.2019.15237510.1016/j.jallcom.2019.152375 ↗
35. 10.1016/j.jcis.2020.01.02510.1016/j.jcis.2020.01.025 ↗
36. 10.1021/acs.nanolett.9b0048710.1021/acs.nanolett.9b00487 ↗
37. 10.1002/chem.20180363410.1002/chem.201803634 ↗
38. 10.1021/cs501970w10.1021/cs501970w ↗
39. 10.1039/C6TC03751H10.1039/C6TC03751H ↗
40. 10.1039/C3NR05630A10.1039/C3NR05630A ↗
41. 10.1021/acsnano.7b0116810.1021/acsnano.7b01168 ↗
42. 10.1002/adfm.20160008110.1002/adfm.201600081 ↗
43. 10.1021/acs.jpcc.6b0621710.1021/acs.jpcc.6b06217 ↗
44. 10.1016/S0169-4332(03)00697-410.1016/S0169-4332(03)00697-4 ↗
45. 10.1021/jacs.7b0486510.1021/jacs.7b04865 ↗
46. 10.1002/adma.20180494510.1002/adma.201804945 ↗
47. 10.1039/D0NR04338A10.1039/D0NR04338A ↗