journal article·2021-12

Self‐Patterned CsPbBr3 Nanocrystal Based Plasmonic Hot‐Carrier Photodetector at Telecommunications Wavelengths

Zhiyu Wang, Cheng‐Chieh Lin, Ya‐Lun Ho, Rong Xiang, Shigeo Maruyama, Chun‐Wei Chen, Jean‐Jacques Delaunay

Advanced Optical Materials· Volume 9· Issue 24
Publisher page

Abstract

Abstract Extending the photodetection range of lead halide perovskites into the near‐infrared telecommunications bands can not only enable a wide‐spectrum solar energy harvesting, but pave ways for important applications in biodetection, infrared imaging, and telecommunication. However, there is a lack of an effective means to apply lead halide perovskites for efficient photodetection covering a wide wavelength range in the telecommunications bands. Here, CsPbBr3 nanocrystal‐ (NC‐) based photodetector operating at wavelengths in the telecommunications bands via surface plasmon‐induced hot holes is demonstrated. The internal photoemission of the plasmon‐induced hot holes from plasmonic antennas into CsPbBr3 NCs enables a photocurrent at wavelengths around 1550 nm. Moreover, a solvent treatment is also performed on drop‐casted CsPbBr3 NC thin film leading to a nanoscale self‐patterning with a compact and uniform morphology. This treatment benefits the carrier transportation contributing to a detectable photoresponse and minimizes the optical scattering so that the CsPbBr3 NCs can be integrated into the plasmonic structure without damping its resonant feature. Consequently, the CsPbBr3 NC‐based plasmonic hot‐carrier device achieves polarization discrimination and wavelength‐selective photodetection without additional optical components.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Engineering The University of Tokyo 7‐3‐1 Hongo Bunkyo‐ku Tokyo 113‐8656 Japan

International Graduate Program of Molecular Science and Technology (NTU‐MST) National Taiwan University No. 1, Sec. 4, Roosevelt Rd. Taipei 10617 Taiwan

Department of Materials Science and Engineering National Taiwan University No. 1, Sec. 4, Roosevelt Rd. Taipei 10617 Taiwan

Molecular Science and Technology Program Taiwan International Graduate Program (TIGP) Academia Sinica No. 128, Sec. 2, Academia Rd. Taipei 11529 Taiwan

Center of Atomic Initiative for New Materials (AI‐MAT) National Taiwan University No. 1, Sec. 4, Roosevelt Rd. Taipei 10617 Taiwan

Funding

Ministry of Science and Technology, Taiwan

References (47)

Show source-provided references
1. 10.1038/nphoton.2013.34210.1038/nphoton.2013.342 ↗
2. 10.1038/nnano.2014.18110.1038/nnano.2014.181 ↗
3. 10.1038/nature1830610.1038/nature18306 ↗
4. 10.1038/s41467-018-07706-910.1038/s41467-018-07706-9 ↗
5. 10.1038/s41563-018-0170-x10.1038/s41563-018-0170-x ↗
6. 10.1038/ncomms923810.1038/ncomms9238 ↗
7. 10.1038/ncomms1564010.1038/ncomms15640 ↗
8. 10.1038/s41586-018-0576-210.1038/s41586-018-0576-2 ↗
9. 10.1038/s41586-018-0575-310.1038/s41586-018-0575-3 ↗
10. 10.1038/s41566-017-0047-610.1038/s41566-017-0047-6 ↗
11. 10.1038/s41467-020-17096-610.1038/s41467-020-17096-6 ↗
12. 10.1038/s41586-018-0451-110.1038/s41586-018-0451-1 ↗
13. 10.1038/s41467-019-12513-x10.1038/s41467-019-12513-x ↗
14. 10.1002/adfm.20170105310.1002/adfm.201701053 ↗
15. 10.1021/acs.jpcc.9b0328910.1021/acs.jpcc.9b03289 ↗
16. 10.1002/adom.20170081910.1002/adom.201700819 ↗
17. 10.1039/C7NR06193E10.1039/C7NR06193E ↗
18. 10.1002/adma.20160443110.1002/adma.201604431 ↗
19. 10.1038/s41467-018-05947-210.1038/s41467-018-05947-2 ↗
20. 10.1038/s41377-020-00418-010.1038/s41377-020-00418-0 ↗
21. 10.1016/j.nanoen.2020.10510310.1016/j.nanoen.2020.105103 ↗
22. 10.1038/s41586-020-2508-110.1038/s41586-020-2508-1 ↗
23. 10.1038/s41524-019-0184-110.1038/s41524-019-0184-1 ↗
24. 10.1126/science.120305610.1126/science.1203056 ↗
25. 10.1038/ncomms264210.1038/ncomms2642 ↗
26. 10.1038/nnano.2013.22810.1038/nnano.2013.228 ↗
27. 10.1038/ncomms937910.1038/ncomms9379 ↗
28. 10.1038/s41467-019-09112-110.1038/s41467-019-09112-1 ↗
29. 10.1088/1361-648X/ab50cf10.1088/1361-648X/ab50cf ↗
30. 10.1038/ncomms879710.1038/ncomms8797 ↗
31. 10.1002/adfm.20200628310.1002/adfm.202006283 ↗
32. 10.1002/adfm.20160157110.1002/adfm.201601571 ↗
33. 10.1038/nmat401410.1038/nmat4014 ↗
34. 10.1002/smll.20160236610.1002/smll.201602366 ↗
35. 10.1021/acsphotonics.7b0115610.1021/acsphotonics.7b01156 ↗
36. 10.1063/1.353079510.1063/1.3530795 ↗
37. 10.1038/ncomms210910.1038/ncomms2109 ↗
38. 10.1002/lpor.20110004110.1002/lpor.201100041 ↗
39. 10.1002/adfm.20210218310.1002/adfm.202102183 ↗
40. 10.1103/PhysRevB.93.19520210.1103/PhysRevB.93.195202 ↗
41. 10.1021/acsphotonics.8b0062310.1021/acsphotonics.8b00623 ↗
42. 10.1021/acsenergylett.8b0247810.1021/acsenergylett.8b02478 ↗
43. 10.1021/acs.cgd.9b0136810.1021/acs.cgd.9b01368 ↗
44. 10.1021/nl504877910.1021/nl5048779 ↗
45. 10.1364/OE.39224610.1364/OE.392246 ↗
46. S.Paradis J. B. A.Keptsu Characterization and optimization of SiO2and Si3N4thin films DRDC Valcartier TM 2012‐270 February2013.
47. 10.1364/AO.37.00527110.1364/AO.37.005271 ↗