Hybrid Light‐Emitting Transistors Based on Low‐Temperature Solution‐Processed Metal Oxides and a Charge‐Injecting Interlayer

The performance of solution and low-temperature processed hybrid light-emitting field-effect transistors is enahnced by a new development strategy. The manipulation of the work function at the oxide/polymer interface is presented for achieving high all-round performance in these devices. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.