Overcoming the Short‐Wave Infrared Barrier in the Photoluminescence of Amino‐As‐Based InAs Quantum Dots

Abstract The synthesis of amino‐As‐based InAs quantum dots (QDs) with narrow excitonic absorption features and efficient photoluminescence (PL) beyond 1000 nm remains a considerable challenge. A key limitation lies in the use of conventional reducing agents, which typically release low‐boiling byproducts. These volatile species cause temperature fluctuations, leading to unstable reaction conditions that are detrimental in seeded growth strategies. In this work, we demonstrate that trioctylamine‐alane (TOA‐AlH ₃ ), a reducing agent with a high boiling point, enables the one‐pot synthesis of InAs QDs with narrow excitonic absorption peaks extending up to 935 nm. Upon ZnSe shell growth, these QDs exhibit high PL quantum yields (QYs) of 75% and 60% at 905 and 1000 nm, respectively, which are record values for amino‐As‐based InAs@ZnSe systems. Moreover, TOA‐AlH ₃ is applied in a seeded growth approach to prepare larger InAs QDs, achieving narrow excitonic absorption up to 1350 nm. After ZnSe shelling, these samples exhibit PLQYs of 46%, 38%, 32%, and 23% at 1160, 1250, 1335, and 1430 nm, respectively. Importantly, TOA‐AlH ₃ is compatible with ZnCl ₂ , a necessary additive for reaching high PLQYs. These advancements establish a robust and scalable synthetic route to highly luminescent InAs QDs, paving the way for their integration into next‐generation infrared optoelectronic applications.