Leveraging Phenazine‐Based Ligands for Optimized Perovskite Optoelectronic Performance Through Chelation and Redox Engineering

Abstract Perovskite nanocrystals (PNCs) hold immense potential for optoelectronic and photovoltaic applications. However, their performance is hindered by surface defects that promote non‐radiative recombination and reduce stability. Surface engineering, particularly through defect passivation, is crucial for achieving high‐performing perovskite solar cells. Chelation has been shown to significantly improve the efficiency and stability of perovskite solar cells. In this study, a novel chelation strategy using 1,10‐Phenanthroline (Phen) is presented as a bidentate chelating ligand to effectively target and passivate these detrimental surface defects. By strategically designing a Phenanthroline derivative, dipyrido[3,2‐a:2′,3′‐c]phenazin‐11‐amine (Phen‐derivative) with optimized redox potentials, dual functionality: efficient defect passivation and hole transport is achieved. X‐ray photoelectron spectroscopy (XPS) confirms the superior binding capability of the Phen‐derivative due to chelation. This strong interaction facilitates efficient and ultrafast charge transfer from PNCs and the formation of a long‐lived charge‐separated state, as evidenced by sustained bleaching in transient absorption spectra. A metal‐dipyrido[3,2‐a:2′,3′‐c]phenazin‐11‐amine complex (Ir‐complex) derived from dipyrido[3,2‐a:2′,3′‐c]phenazin‐11‐amine, but lacking a chelation site, hinders desired hole transfer despite similar charge transfer energetics. This work emphasizes the critical role of chelation‐mediated interfacial interactions and energy alignment in designing effective charge shuttle molecules and unlocking the potential of lead‐chelating hole transporters for next‐generation light‐harvesting technologies.