High‐Efficiency Pure Red CsPbI₃ QLEDs Via Strong Electron Affinity Interface Layer Engineering

Abstract Inorganic perovskite quantum dots (QDs) have garnered significant attention due to their outstanding optical properties. However, perovskite quantum dot light‐emitting diodes (Pe‐QLEDs) still face challenges related to their fluorescence efficiency and electron injection. First, the electron transport layer (ETL) leads to severe non‐radiative recombination due to fluorescence quenching in CsPbI₃ QDs. Second, there is an electron injection imbalance resulting from low electron injection efficiency, leading to reduced non‐radiative recombination and external quantum efficiency. To address these issues, this study introduces two interface layer materials with different electron affinities, 1,3,5‐Tris(3‐pyridyl‐3‐phenyl)benzene (TmPyPB) and 2,4,6‐Tris(3′‐(pyridine‐3‐yl)biphenyl‐3‐yl)‐1,3,5‐triazine (TmPPPyTz). These materials not only passivated defects on the surface of CsPbI₃ QDs films but also effectively prevented the fluorescence quenching of CsPbI₃ QDs by the PO‐T2T (ETL). TmPPPyTz, with a relatively lower LUMO energy level, further improved energy level matching, significantly enhancing electron injection efficiency. Ultimately, using interface engineering with the TmPPPyTz interface layer, the devices achieved an outstanding 25.80% champion‐level external quantum efficiency (EQE) for Pe‐QLEDs with only a sub‐bandgap voltage of 1.7 V and half‐life (T₅₀) is 17.99 h at 100 nits. This research provided an effective method to enhance the performance of CsPbI₃ Pe‐QLEDs, addressing long‐standing issues inhibiting their efficiency.