Source abstract
Abstract
Abstract The perovskite polycrystalline thin film detector fabricated by solution method is a promising low‐cost, scalable technology for radiation imaging, but its thin volume limits the sensing efficiency for high‐energy X‐ray photons. This work reports 2D perovskite thin film photo‐diodes with a detection gain when sensing visible and X‐ray photons. Detailed power and temperature‐dependent device characterizations reveal a charge multiplication effect to be responsible for the observed high gain. This is caused by a disparity in electron and hole transport, where electron transport is retarded by a trap/de‐trap process via shallow trap states, whereas the hole transport is fast enough to produce a photoconductive gain in satisfying the charge neutrality. The 2D perovskite made with butylamine spacers is also found to exhibit a larger efficiency gain than those made with phenylethylamines because of the higher likelihood of forming shallow traps in the former. The thin film diodes feature a high temporal response over 1 MHz due to the fast charge collection across a thin volume, and the discovery provides device physics mechanisms in connection to material structure‐function relationship for future optoelectronics design that can boost the efficiency of X‐ray sensing and dim light detection.
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Affiliations
Center for Integrated Nanotechnologies Los Alamos National Laboratory Los Alamos NM 87545 USA
Department of Chemistry University of California Berkeley Berkeley CA 94720 USA
Nuclear Engineering Program Department of Mechanical and Aerospace Engineering The Ohio State University Columbus OH 43210 USA
Department of Chemistry Northwestern University Evanston IL 60208 USA
Center for Nanoscale Materials Argonne National Laboratory Lemont IL 60439 USA
Consortium for Advanced Science and Engineering University of Chicago Chicago IL 60637 USA
Theoretical Division Los Alamos National Laboratory Los Alamos NM 87545 USA
Funding
Los Alamos National Laboratory