DataVXAdvanced Optical MaterialsPaper
journal article·2023-08Open access

Atomically Thin Gallium Nitride for High‐Performance Photodetection

Shubhendra Kumar Jain, Nitu Syed, Sivacarendran Balendhran, Sherif Abdulkader Tawfik Abbas, Rajour Tanyi Ako, Mei Xian Low, Charlene Lobo, Ali Zavabeti, Billy J. Murdoch, Govind Gupta, Madhu Bhaskaran, Kenneth B. Crozier, Salvy P. Russo, Torben Daeneke, Sumeet Walia

Advanced Optical Materials· Volume 11· Issue 15
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Source abstract

Abstract

Abstract Gallium nitride (GaN) technology has matured and commercialised for optoelectronic devices in the ultraviolet (UV) spectrum over the last few decades. Simultaneously, atomically thin materials with unique features have emerged as contenders for device miniaturization. However, the lack of successful techniques to produce ultra‐thin GaN prevents access to these new predicted properties. Here, this important gap is addressed by printing millimeter‐large ultra‐thin GaN nanosheets (NS) (≈1.4 nm) using a simple two‐step process that simultaneously introduces nitrogen point defects. This extends the photoelectrical spectral response from UV (280 nm) to near infrared (NIR) (1080 nm). The GaN‐based photodetectors display excellent figures of merit, having a responsivity (2.72 × 104 A W−1) up to four orders of magnitude higher than the commercial photodetectors at room temperature, despite being 102–103 times thinner. The photodetectors exhibit fast switching, with rise and decay time in the range of microseconds. The state‐of‐the‐art device performance originates from the ultra‐thin nature of GaN NS coupled with nitrogen point vacancies in the synthesis process. This work presents the opportunity to significantly expand the reach of GaN semiconductor technology and may lead to applications in high‐performance miniaturized imaging systems, spectroscopy, communication, and integrated optoelectronic circuits.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Functional Materials and Microsystems Research Group and the Micro Nano Research Facility RMIT University Melbourne Victoria 3000 Australia

Sensor Devices & Metrology Group CSIR ‐ National Physical Laboratory (CSIR‐NPL) 110012 Dr K. S. Krishnan Road New Delhi India

Academy of Scientific & Innovative Research (AcSIR) CSIR‐HRDC Campus Ghaziabad Uttar Pradesh 201002 India

School of Engineering RMIT University Melbourne Victoria 3000 Australia

ARC Centre of Excellence for Transformative Meta‐Optical Systems The University of Melbourne Parkville VIC 3010 Australia

School of Physics The University of Melbourne Parkville VIC 3010 Australia

ARC Centre of Excellence in Exciton Science School of Science RMIT University Melbourne VIC 3001 Australia

School of Mathematical and Physical Sciences University of Technology Sydney Ultimo NSW 2007 Australia

Department of Chemical Engineering The University of Melbourne Parkville VIC 3010 Australia

RMIT Microscopy and Microanalysis Facility RMIT University Melbourne VIC 3001 Australia

ARC Centre of Excellence for Transformative Meta‐Optical Systems RMIT University Melbourne Victoria 3000 Australia

Department of Electrical and Electronics Engineering The University of Melbourne Parkville VIC 3010 Australia

Funding

Australian Research Council

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