High‐Efficiency Air‐Processed Si‐Based Perovskite Light‐Emitting Devices via PMMA‐TBAPF₆ Co‐Doping

Abstract The preparation of high‐efficiency perovskite light‐emitting devices (PeLEDs) in the air‐ambient has always been a challenge. Herein, the authors propose a Si‐based near‐infrared air‐processed PeLED through the anti‐solvent engineering. Two materials, poly(methyl methacrylate) (PMMA) and tetrabutylammonium hexafluorophosphate (TBAPF₆) are co‐doped into the anti‐solvent, the former protects the perovskite from degradation in a high‐humidity atmosphere, and the latter passivates the defects on perovskite surface and increases the conductivity. Through the anti‐solvent engineering, the efficiency of PeLEDs has been significantly enhanced and obtains a maximum external quantum efficiency (EQE) of 10.4%, which is the highest among similar devices. This work shows that it is possible to prepare high‐efficiency near‐infrared PeLEDs in air‐ambient through a simple method.