Ultrafast and Robust UV Luminescence from Cu‐Doped ZnO Nanowires Mediated by Plasmonic Hot Electrons
Source abstract
Abstract
Leveraging on plasmonic hot electrons is regarded as an emerging strategy for electron–hole separation toward efficient photovoltaics and photocatalysis, but its application in electron–hole recombination for illumination is rarely explored. Herein, a significantly improved ultraviolet luminescence is reported from Cu‐doped ZnO nanowires (NWs) through dopant mediated generation and transfer of plasmonic hot electrons. Through coupling the Cu dopants‐correlated green luminescence in Cu‐doped ZnO NWs with the localized surface plasmon resonance of Au nanoparticles (NPs), UV emission from the NWs is enhanced by a factor of ≈280 and its lifetime drops from 2.45 ns to about 18 ps after covering the NWs with Au NPs. Moreover, robust UV emission sustains from room temperature to low temperature. This work extends the applications of plasmonic hot electrons and provides an appealing route toward achieving intense, ultrafast, and temperature‐robust luminescence, which holds great potential in light‐emitting diode and laser diodes for illumination, optical communication, and biomedical applications.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Quantum Dots Synthesis And Properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Materials Research and Engineering Agency for Science, Technology and Research (A*STAR) Singapore 138634 Singapore
Department of Electrical and Electronic Engineering South University of Science and Technology of China Shenzhen 518055 China
Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA
Department of Electrical and Computer Engineering National University of Singapore Singapore 117576 Singapore
Funding
Natural Science Foundation of China
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