High‐Performance Broadband Photodetectors of Heterogeneous 2D Inorganic Molecular Sb₂O₃/Monolayer MoS₂ Crystals Grown via Chemical Vapor Deposition

Abstract The newly emerged 2D materials heterostructures, including layered and nonlayered structures, are regarded as the building blocks for future high performance optoelectronic devices. However, it still remains a great challenge to directly synthesize 2D heterostructures for realizing broadband detection in photodetectors. In this work, the growth of vertically stacked inorganic molecular Sb₂O₃/monolayer MoS₂ heterostructures through a two‐step chemical vapor deposition method is demonstrated, and high performance ultraviolet/near‐infrared photodetectors based on the achieved heterostructures are further developed. Excellent responsivity of 5.3 × 10⁴ A W⁻¹ and detectivity of 2.0 × 10¹⁵ Jones are obtained under 457 nm illumination. Additionally, the photodetection range can be extended to near‐infrared region. Maximum responsivity of 7.8 A W⁻¹, detectivity of 3.4 × 10¹¹ Jones, and fast response speed (<60 ms) are obtained under 1064 nm laser illumination at room temperature, which is far superior to those of the previously reported ultra‐thin 2D van de Waals heterostructures. The inorganic molecular Sb₂O₃/monolayer MoS₂ heterostructures enrich the family of 2D materials heterostructures, showing potential applications in high performance functional electronics and optoelectronics.