A Surface Plasmon Enhanced Near‐Infrared Nanophotodetector
Source abstract
Abstract
In this work, we present a plasmonic near infrared light photodetector for the detection of 980 nm illumination. The plasmonic photodetector is fabricated by modifying single layer graphene (SLG)/InP Schottky junction diode with SiO2 encapsulated gold nanorods (SiO2@AuNR), which can confine the incident NIR light by inducing obvious localized surface plasmon resonance, according to theoretical simulation based on finite element method. This study shows that after decoration with plasmonic SiO2@AuNR, the device performance in terms of photocurrent and responsivity is considerably enhanced. In addition, the device exhibited a very fast respose rate which is able to monitor switching optical signals with a frequency as high as 1 MHz, suggesting a potential application for sensing high‐frequency optical signals. This study manifests that the present plasmonic NIR photodetector will have great potential in future optoelectronic devices application.
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Research context
OpenAlex topics: Plasmonic and Surface Plasmon Research · Nanowire Synthesis and Applications · Gold and Silver Nanoparticles Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices Hefei University of Technology Hefei Anhui 230009 P. R. China
School of Computer and Information Hefei University of Technology Hefei Anhui 230009 P. R. China
Funding
Natural Science Foundation of China · Natural Science Foundation of Anhui Province · Fundamental Research Funds for the Central Universities
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