DataVXAdvanced Optical MaterialsPaper
journal article·2020-10

Surface Ligand Engineering for CsPbBr3 Quantum Dots Aiming at Aggregation Suppression and Amplified Spontaneous Emission Improvement

Qian Xiong, Sihao Huang, Juan Du, Xiaosheng Tang, Fanju Zeng, Zhengzheng Liu, Zeyu Zhang, Tongchao Shi, Jie Yang, Daofu Wu, Hao Lin, Zhongtao Luo, Yuxin Leng

Advanced Optical Materials· Volume 8· Issue 20
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Source abstract

Abstract

Abstract In recent years, it has been reported that using ligands modification to passivate the surface is one reasonable approach to improve the optical properties and stability of perovskite quantum dots (QDs). However, a simple and effective way to diminish the aggregation phenomenon of perovskite QDs is still challenging. Herein, a ligand‐engineering strategy is adopted to fabricate CsPbBr3 QDs by applying a shorter capping ligand octylamine (OLA) to replace the commonly used long ligand oleylamine (OAm). After the ligand modification, the photoluminescence quantum yield of CsPbBr3 QDs is enhanced from 62.4% to 91.3%. No aggregation or degradation phenomenon can be observed in solution even after being exposed to the air for 100 days. Moreover, the OLA‐CsPbBr3 QDs film can keep 96.8% of initial photoluminescence intensity even when stored under ambient condition for 5 weeks. Furthermore, the stimulated emission performance is investigated in terms of amplified spontaneous emission (ASE), and the ASE threshold of OLA‐CsPbBr3 QDs is only 24% of the OAm‐CsPbBr3 QDs threshold, and the ASE photostability is also enhanced. All the results suggest that the OLA ligand modification is an available strategy to improve the properties of CsPbBr3 QDs and to shed light on the potential practical applications for photoelectric devices.
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Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Organic Light-Emitting Diodes Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of High Field Laser Physics CAS Center for Excellence in Ultra‐intense Laser Science Shanghai Institute of Optics and Fine Mechanics (SIOM) Chinese Academy of Sciences (CAS) Shanghai 201800 China

School of Physical Science and Technology ShanghaiTech University Shanghai 200031 China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou 310024 China

Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education) College of Optoelectronic Engineering Chongqing University Chongqing 400044 China

School of Materials Science and Engineering Zhengzhou University Zhengzhou 450001 China

Funding

National Natural Science Foundation of China · Program of Shanghai Academic Research Leader · Fundamental Research Funds for the Central Universities · Chongqing Research Program of Basic Research and Frontier Technology · Ministry of Industry and Information Technology of the People's Republic of China

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