journal article·2019-11

Thickness‐Dependent Optical Properties and In‐Plane Anisotropic Raman Response of the 2D β‐In2S3

Yu Zhao, Daizhe Yu, Jianting Lu, Li Tao, Zefeng Chen, Yibin Yang, Aixiang Wei, Lili Tao, Jun Liu, Zhaoqiang Zheng, Mingming Hao, Jian‐Bin Xu

Advanced Optical Materials· Volume 7· Issue 22
Publisher page

Abstract

Abstract Recent years have witnessed major advances in development of massive nonlayer structured ultrathin materials, providing great enrichment to the 2D nanomaterial family. The intriguing physical and chemical properties brought by nonlayered nanomaterials have attracted tremendous research interest. In this work, a systematica study of the optical properties of 2D nonlayered β‐diindium trisulfide (β‐In2S3) is reported. The thickness‐dependent photoluminescence (PL), Raman spectra, and absorption property are measured for ultrathin β‐In2S3 flakes and found distinguished from its bulk counterpart. These peculiar features originate from the superficial indium oxide in ultrathin β‐In2S3, as revealed by low‐temperature PL and X‐ray photoelectron spectroscopy measurement. The Raman vibration modes are identified by Raman spectra measurements combined with calculations using density functional theory. Importantly, the tetragonal β‐In2S3 flakes exhibit strong in‐plane anisotropic Raman response under the angle‐resolved polarized Raman spectroscopy measurements. The results in this paper provide an in‐depth understanding of the emerging 2D nonlayered material In2S3 and pave a fundamental step for its potential applications in future electronics and optoelectronics.
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Research context

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter School of Material and Energy Guangdong University of Technology Guangzhou 510006 China

Department of Electronic Engineering The Chinese University of Hong Kong Hong Kong SAR, China

Funding

Pearl River S and T Nova Program of Guangzhou · National Natural Science Foundation of China · Innovation and Technology Commission

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