Visible‐Light Ultrasensitive Solution‐Prepared Layered Organic–Inorganic Hybrid Perovskite Field‐Effect Transistor

An ultrasensitive visible-light transistor is fabricated by applying one-step solution-processed 2D perovskite (C6H5C2H4NH3)2SnI4 film with high crystallinity as the channel layer. The phototransistor shows high photoresponsivity over 104 A W–1 to very week visible-light signals because of the inorganic charge-carrying sheets extending in the direction of carrier transport in the field-effect transistor. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.