High Performance and Polarization‐Sensitive Photodetector Enabled by MoTe₂/MoWS₄ Heterojunction

Abstract New‐type 2D materials attract more and more attentions as their high performance in the applications of infrared detectors. In this work, a near‐infrared photodetector based on MoTe₂/MoWS₄ heterojunction is proposed with type II energy band structure. The device leverages the p‐type MoTe₂ and n‐type MoWS₄ to form a P‐N junction, where the type II energy band alignment effectively facilitates electron‐hole separation. This photodetector shows capability to detect linearly polarized light, and also possesses excellent detection performance, such as a broad detection band range from 532 nm to 1550 nm and a high responsivity of 0.6 A W⁻¹ at the wavelength of 1310 nm. Moreover, the device demonstrates a high detectivity of 2.1 × 10⁹ Jones, a notable external quantum efficiency (EQE) of 56%, and short rise/fall time of 21.6/5.8 ms, respectively. In addition, our design device has single‐point imaging capability, and utilizes the polarization characteristics of MoWS₄ to achieve its polarization detection with photocurrent anisotropy ratio of 23.25. Therefore, this MoTe₂/MoWS₄ heterostructure offers a promising approach to advancing the development of polarization‐sensitive devices based on 2D van der Waals heterostructures even broadband optoelectronic devices, which has the broad potentials to be applied in the fields of high‐performance polarization detection.