Semiconductor Bandgap Measurements: Overview of Optical, Electrical, and Device‐Level Techniques

Abstract Semiconductor materials are the foundation of modern electronic and optoelectronic devices. Among their key characteristics, the bandgap holds particular significance, as its precise determination is essential for optimizing the performance of devices such as solar cells, light emitting diods (LEDs), and transistors, as well as for enabling next‐generation innovations. This review presents a comprehensive analysis of methodologies for determining the bandgap in semiconductor materials and devices. Optical techniques, including UV–visible spectroscopy and photoluminescence spectroscopy, are highlighted for their ability to extract bandgap information through spectral features like the self‐absorption edge. Additionally, electrical measurement techniques are explored for their insights into the relationship between bandgap and device performance. By integrating diverse methods into a cohesive framework, this review serves as a valuable resource for researchers and engineers, offering clear guidance on selecting and applying bandgap determination techniques. It aims to streamline the understanding of these methodologies, fostering clarity, innovation, and precision in semiconductor research and development.