journal article·2023-11Open access

Controllable Photocurrent Generation in Lateral Bilayer MoS2–WS2 Heterostructure

Dongyang Zhao, Hanxue Jiao, Chao chen, Yan Chen, Shuang Wang, Hechun Cao, Xudong Wang, Guanghui Yu, Wei Bai, Xiaodong Tang, Jianlu Wang, Junhao Chu

Advanced Optical Materials· Volume 11· Issue 21

Abstract

Abstract Laterally epitaxial two‐dimensional (2D) transition metal dichalcogenides (TMDs) heterojunctions are of considerable interest in recent years due to atomically sharp interfaces and tunable band alignment, which have potential applications in novel functional electronics and optoelectronics. However, the studies of 2D lateral heterostructures have mainly focused on the synthesis methods and pristine performance of the fabricated heterojunctions. Herein, the controllable photocurrent generation and enhanced performances of the lateral bilayer (LBL) MoS2–WS2 heterojunctions are reported. A tunable and abrupt built‐in field forms at the interface, and the gate‐tunable rectifying behavior and photovoltaic effect are realized. It is demonstrated that the generation of the photocurrent in the device can be highly controlled to realize ultrahigh responsivity of 1.06 × 104 A W−1 and detectivity of 1.14 × 1013 Jones at a 638 nm incident light. The lateral TMDs heterostructures are expected to constitute the ultimate functional elements of novel electronics and optoelectronics.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics East China Normal University Shanghai 200241 P.R. China

State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences No.500 Yutian Road Shanghai 200083 China

Air Force Logistics University Xuzhou 221000 China

Shanghai Frontier Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics Fudan University Shanghai 200433 China

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

Frontier Institute of Chip and System Fudan University Shanghai 200433 China

Funding

National Natural Science Foundation of China · Science and Technology Commission of Shanghai Municipality

References (51)

Show source-provided references
1. 10.1038/s41467-017-02093-z10.1038/s41467-017-02093-z ↗
2. 10.1088/2399-1984/abd53a10.1088/2399-1984/abd53a ↗
3. 10.1002/inf2.1207110.1002/inf2.12071 ↗
4. 10.1002/aelm.20180006910.1002/aelm.201800069 ↗
5. 10.1002/adfm.20180469610.1002/adfm.201804696 ↗
6. 10.1038/nature2515510.1038/nature25155 ↗
7. 10.1016/j.nanoen.2018.06.04910.1016/j.nanoen.2018.06.049 ↗
8. 10.1002/adma.20180366510.1002/adma.201803665 ↗
9. 10.1021/acsnano.0c0009810.1021/acsnano.0c00098 ↗
10. 10.1021/jacs.0c0569110.1021/jacs.0c05691 ↗
11. 10.1002/adfm.20220167310.1002/adfm.202201673 ↗
12. 10.1021/acsnano.2c0224210.1021/acsnano.2c02242 ↗
13. 10.1002/smll.20170329310.1002/smll.201703293 ↗
14. Guo J. X. · J. Infrared Millimeter Waves · 2022 · 41 · 40
15. Shi Q. · J. Infrared Millimeter Waves · 2022 · 41 · 139
16. 10.1021/acsnano.7b0501210.1021/acsnano.7b05012 ↗
17. 10.1038/s41467-022-32582-910.1038/s41467-022-32582-9 ↗
18. 10.1021/nl501962c10.1021/nl501962c ↗
19. 10.1038/nnano.2014.15010.1038/nnano.2014.150 ↗
20. 10.1021/acsnano.6b0098010.1021/acsnano.6b00980 ↗
21. 10.1126/science.aab409710.1126/science.aab4097 ↗
22. 10.1021/acs.nanolett.0c0420410.1021/acs.nanolett.0c04204 ↗
23. 10.1038/natrevmats.2016.4210.1038/natrevmats.2016.42 ↗
24. 10.1038/nmat409110.1038/nmat4091 ↗
25. 10.1038/s41565-022-01106-310.1038/s41565-022-01106-3 ↗
26. 10.1002/adfm.20210204910.1002/adfm.202102049 ↗
27. 10.1002/adom.20190081510.1002/adom.201900815 ↗
28. 10.1021/acsnano.9b0495710.1021/acsnano.9b04957 ↗
29. 10.1021/acsanm.2c0418910.1021/acsanm.2c04189 ↗
30. 10.1021/jacs.8b0740110.1021/jacs.8b07401 ↗
31. 10.1038/nnano.2017.20910.1038/nnano.2017.209 ↗
32. 10.1038/ncomms249810.1038/ncomms2498 ↗
33. 10.1038/s41565-018-0069-310.1038/s41565-018-0069-3 ↗
34. 10.1002/adfm.20170453910.1002/adfm.201704539 ↗
35. 10.1002/adma.20170699510.1002/adma.201706995 ↗
36. 10.1021/acsnano.1c0549110.1021/acsnano.1c05491 ↗
37. 10.1038/s41928-018-0086-010.1038/s41928-018-0086-0 ↗
38. 10.1038/nnano.2014.22210.1038/nnano.2014.222 ↗
39. 10.1016/j.matlet.2022.13210310.1016/j.matlet.2022.132103 ↗
40. 10.1088/2053-1583/ac395f10.1088/2053-1583/ac395f ↗
41. 10.1021/acsanm.1c0089010.1021/acsanm.1c00890 ↗
42. 10.1021/acsami.7b1485310.1021/acsami.7b14853 ↗
43. 10.1021/nn100393710.1021/nn1003937 ↗
44. 10.1103/PhysRevB.84.15541310.1103/PhysRevB.84.155413 ↗
45. 10.1002/adfm.20220144910.1002/adfm.202201449 ↗
46. 10.1002/smll.20200226310.1002/smll.202002263 ↗
47. 10.1038/s41467-019-13769-z10.1038/s41467-019-13769-z ↗
48. 10.1002/adfm.20210108610.1002/adfm.202101086 ↗
49. 10.1021/acsami.7b0866810.1021/acsami.7b08668 ↗
50. 10.1021/acsami.6b1337910.1021/acsami.6b13379 ↗
51. 10.1038/s41467-019-12707-310.1038/s41467-019-12707-3 ↗