Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature

Huide Wang; Haoxin Huang; Jiajia Zha; Yunpeng Xia; Peng Yang; Yonghong Zeng; Yi Liu; Rui Cao; Bing Wang; Wei Wang; Long Zheng; Ye Chen; Qiyuan He; Xing Chen; Ke Jiang; Ja‐Hon Lin; Zhe Shi; Johnny C. Ho; Han Zhang; Chaoliang Tan

doi:10.1002/adom.202301508

journal article·2023-12Open access

Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature

Huide Wang, Haoxin Huang, Jiajia Zha, Yunpeng Xia, Peng Yang, Yonghong Zeng, Yi Liu, Rui Cao, Bing Wang, Wei Wang, Long Zheng, Ye Chen, Qiyuan He, Xing Chen, Ke Jiang, Ja‐Hon Lin, Zhe Shi, Johnny C. Ho, Han Zhang, Chaoliang Tan

Advanced Optical Materials· Volume 11· Issue 23

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Source abstract

Abstract

Abstract Large dark current at room temperature has long been the major bottleneck that impedes the development of high‐performance infrared photodetectors toward miniaturization and integration. Although infrared photodetectors based on layered 2D narrow bandgap semiconductors have shown admirable advantages compared with those based on conventional compounds, which typically suffer from the expensive cryogenic operation, it is still urgent to develop a simple but effective strategy to further reduce the dark current. Herein, a tellurium (Te)‐based infrared photodetector is reported with specifically designed asymmetric electrical contact area. The deliberately introduced asymmetric electrical contact raises the electric field intensity difference in the Te channel near the drain and the source electrodes, resulting in the spontaneous asymmetric carrier diffusion under global infrared light illumination under zero bias. Specifically, the Te‐based photodetector presents promising detector performance at room temperature including a low dark current of ≈1 nA, an ultrahigh photocurrent/dark current ratio of 1.57 × 10⁴, a high specific detectivity (D*) of 3.24 × 10⁹ Jones, and a relatively fast response speed of ≈720 µs at zero bias. The results prove that the simple design of asymmetric electrical contact areas can provide a promising solution to high‐performance 2D semiconductor‐based infrared photodetectors working at room temperature.

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Research context

Electronic materials

OpenAlex topics: 2D Materials and Applications · Advanced Semiconductor Detectors and Materials · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering City University of Hong Kong Hong Kong SAR 9990777 China

International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China

Department of Electrical Engineering City University of Hong Kong Hong Kong SAR 999077 China

College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University Shenzhen 518118 China

Department of Chemistry The Chinese University of Hong Kong Hong Kong SAR 999077 China

College of Mathematics and Physics Chengdu University of Technology Chengdu 610041 China

State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 China

Advanced Nanophotonics Technology Laboratory Department of Electro‐Optical Engineering National Taipei University of Technology Taipei 10608 Taiwan

School of Physics & New Energy Xuzhou University of Technology Xuzhou 221018 China

Department of Electrical and Electronic Engineering The University of Hong Kong Pokfulam Road Hong Kong SAR 999077 China

Funding

China Postdoctoral Science Foundation · National Natural Science Foundation of China · Department of Education of Guangdong Province · Basic and Applied Basic Research Foundation of Guangdong Province · Natural Science Foundation of Sichuan Province · State Key Laboratory of Luminescence and Applications · National Taipei University of Technology · Natural Science Foundation of Jiangsu Province

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