Harnessing the Potential of Graphitic Carbon Nitride for Optoelectronic Applications
Source abstract
Abstract
Abstract As an emergent 2D material, graphitic carbon nitride (g‐CN) has attracted much attention, featuring many photochemical applications and showing several advantages (e.g., low cost, earth‐abundance, and stability) over rare metals. Although most studies focus on the photoelectrochemical and photocatalytic applications of g‐CN, its unique photophysical properties can also be exploited in optoelectronic devices such as light‐emitting diodes, photodetectors, photovoltaics, and solar batteries. This review presents the background of g‐CN, emphasizes the excitonic influence on its optical properties, discusses the recent advances in g‐CN‐based optoelectronics, and examines the challenges of high‐end applications, highlighting the new directions of g‐CN research and the related prospects.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Photocatalysis Techniques · 2D Materials and Applications · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Optoelectronic Engineering Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 China
Centre for Catalysis and Clean Energy School of Environment and Science Gold Coast Campus Griffith University Gold Coast Queensland 4222 Australia
Department of Materials Science and Engineering ARC Centre of Excellence in Future Low‐Energy Electronics Technologies (FLEET) Monash University Wellington Road Clayton Victoria 3800 Australia
Funding
National Natural Science Foundation of China
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