Laser‐Mediated Programmable N Doping and Simultaneous Reduction of Graphene Oxides

Programmable N-doping and simultaneous reduction of graphine oxide (GO) by femtosecond laser direct writing in NH3 atmosphere is presented. The unique laser-mediated programmable doping permits complex micropatterns of N-doped graphene, and thus holds great promise for the fabrication and integration of graphene-based devices. N-type transistor behavior is observed in the post-fabricated field-effect transistors. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.