journal article·2021-06

Tailoring the Broadband Emission in All‐Inorganic Lead‐Free 0D In‐Based Halides through Sb3+ Doping

Xingwen Cheng, Renfu Li, Wei Zheng, Datao Tu, Xiaoying Shang, Zhongliang Gong, Jin Xu, Siyuan Han, Xueyuan Chen

Advanced Optical Materials· Volume 9· Issue 12
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Abstract

Abstract All‐inorganic lead‐free metal halides doped with ns2‐metal ions have shown great promise in optoelectronics and photovoltaics owing to their superior optical properties. Herein, a strategy is reported for tailoring the optical properties of 0D A2InX5⋅H2O and A3InX6 (A = Cs, Rb; X = Cl, Br) crystals via Sb3+ doping, and the excited‐state dynamics of Sb3+ is unveiled through temperature‐dependent photoluminescence (PL) and femtosecond transient absorption spectroscopies. Owing to the spatially confined 0D structure of the In‐based halides, Sb3+ ions experience a strong Jahn–Taller distortion on the excited state, which results in intense PL from Sb3+ with a broad emission band and a large Stokes shift. Through the control of A cation and the octahedral unit, tunable Sb3+ emissions (490−750 nm) with PL quantum yields up to 91.8% are achieved in these 0D In‐based halides. These findings provide fundamental insights into the excited‐state dynamics of Sb3+ in 0D metal halides, thus laying a foundation for future design of luminescent lead‐free 0D metal halides through ns2‐metal doping towards versatile applications.
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Research context

OpenAlex topics: Perovskite Materials and Applications · Optical properties and cooling technologies in crystalline materials · Luminescence Properties of Advanced Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

CAS Key Laboratory of Design and Assembly of Functional Nanostructures Fujian Key Laboratory of Nanomaterials and State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 China

Funding

China Postdoctoral Science Foundation

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