DataVXAdvanced Optical MaterialsPaper
journal article·2019-04

Manipulation of Bi3+/In3+ Transmutation and Mn2+‐Doping Effect on the Structure and Optical Properties of Double Perovskite Cs2NaBi1‐xInxCl6

Jun Zhou, Ximing Rong, Peng Zhang, Maxim S. Molokeev, Peijia Wei, Quanlin Liu, Xiuwen Zhang, Zhiguo Xia

Advanced Optical Materials· Volume 7· Issue 8
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Source abstract

Abstract

Abstract The halide double perovskite family represented by A2(B+,B3+)X6 can overcome the lead toxicity and enable generally large band gap engineering via B/B sites' transmutation or exotic dopants to fulfill the emerging applications in the optoelectronic fields. Herein, the design and the experimental synthesis of a new family of Mn2+‐doped Cs2NaBi1‐xInxCl6 crystals with an intense orange‐yellow emission band are reported, and the phase formation stability is discussed via a combined experimental–theoretical approach. Depending on the manipulation of Bi3+/In3+ combination, the band gap increases with In3+ content, and a subsequent evolution from indirect to direct band gap is verified. First‐principles calculations and parity analyses indicate a parity forbidden effect on Cs2NaInCl6, and a combination effect of absorption on Cs2NaBi1‐xInxCl6 from both Cs2NaBiCl6 and Cs2NaInCl6. The associated Mn2+‐doped photoluminescence depending on the Bi3+/In3+ substitution is also addressed from the variation of the different Mn–Cl environment and neighboring‐cation effect.
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Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Solid-state spectroscopy and crystallography · Luminescence Properties of Advanced Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

The Beijing Municipal Key Laboratory of New Energy Materials and Technologies School of Materials Sciences and Engineering University of Science and Technology Beijing Beijing 100083 P. R. China

Shenzhen Key Laboratory of Flexible Memory Materials and Devices College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China

Laboratory of Crystal Physics Kirensky Institute of Physics Federal Research Center KSC SB RAS Krasnoyarsk 660036 Russia

Department of Engineering Physics and Radioelectronics Siberian Federal University Krasnoyarsk 660041 Russia

Department of Physics Far Eastern State Transport University Khabarovsk 680021 Russia

State Key Laboratory of Luminescent Materials and Devices and Institute of Optical Communication Materials South China University of Technology Guangzhou 510641 China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Beijing Municipality

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