Stability of Emerging Halide Perovskite Transistors with Integrated Organic Semiconductor and Insulator Channels

ABSTRACT Device stability remains a critical research focus in metal halide perovskite (MHP)‐based electronic and optoelectronic devices, as it is a prerequisite for their commercialization. To date, extrinsic factors such as moisture, oxygen, light, and heat have been extensively documented as the primary causes of degradation in MHP materials and related devices upon exposure. This review examines the operational and environmental stability of perovskite thin‐film transistors (TFTs) incorporating organic semiconductors or insulating polymers within the transistor channel. A comparative analysis is presented on the use of organic semiconductors and insulating polymers as additives or surface modification layers in emerging perovskite TFTs. In addition, ion migration phenomena in halide perovskite transistors with hybrid semiconducting channels are discussed. Finally, the review provides insights into the challenges associated with integrating organic semiconductors and insulating polymers into MHP TFT channels, emphasizing key processing issues such as solvent orthogonality, binary solvent systems, aggregation, and precursor optimization.