DataVXAdvanced Materials TechnologiesPaper
journal article·2024-04Open access

Physically‐Deposited Hole Transporters in Perovskite PV: NiOx Improved with Li/Mg Doping (Adv. Mater. Technol. 7/2024)

Salih Alper Akalin, Mustafa Erol, Begum Uzunbayir, Sibel Oguzlar, Serdar Yildirim, Fatma Pinar Gokdemir Choi, Serap Gunes, Ugur Deneb Yilmazer Menda, Manuel J. Mendes

Advanced Materials Technologies· Volume 9· Issue 7
Publisher pageOpen full text
Source abstract

Abstract

Hole Transport Material In article number 2301760, Salih Alper Akalin and co-workers explore Li and Mg co-doped NiOx thin films physically deposited from developed sputtering targets obtained through cold isostatic pressing and sintering. Improvements in mobility and conductivity values are observed with Li and Mg doping, which contribute to enhanced PSC performance when used as an HTM layer in the glass-indium tin oxide/NiOx-based HTM/MAPbI3/phenyl butryic acid methyl ester bathocuproine/Ag architecture.
Source: openalex_inverted_index · Quality: baseline

Research context

Ceramics & glassesElectronic materials

OpenAlex topics: Perovskite Materials and Applications · Advancements in Solid Oxide Fuel Cells

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Fabrication and Application of Electronic Materials Dokuz Eylül University Buca Izmir 35390 Turkiye

Department of Nanoscience and Nanoengineering Dokuz Eylul University Buca Izmir 35390 Turkiye

Department of Metallurgical and Materials Engineering Dokuz Eylul University Buca Izmir 35390 Turkiye

Faculty of Arts and Science Department of Physics Davutpasa Campus Yildiz Technical University Esenler Istanbul 34210 Turkiye

i3N/CENIMAT Department of Materials Science NOVA School of Science and Technology and CEMOP/UNINOVA Campus de Caparica Caparica 2829‐516 Portugal

References

Reference metadata was not supplied for this record.