Top Electrode Engineering for High‐Performance Ferroelectric Hf0.5Zr0.5O2 Capacitors (Adv. Mater. Technol. 16/2023)
Source abstract
Abstract
Top Electrode Engineering In article 2300146, Cheol Seong Hwang and co-workers demonstrate that the Ru top electrode significantly improves the ferroelectric performance of the Hf0.5Zr0.5O2/TiN bottom electrode thin film capacitor by adequately controlling the oxygen vacancy concentration at the electrode interface. Therefore, interfacial engineering is an important technology that can overcome the trade-off relationship between ferroelectric polarization and endurance properties of Hf0.5Zr0.5O2 ferroelectric film.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Machine Learning in Materials Science
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Affiliations
Department of Materials Science and Engineering & Inter‐University Semiconductor Research Center College of Engineering Seoul National University Gwanak‐ro 1 Gwanak‐gu Seoul 08826 Republic of Korea
R&D Division SK Hynix Semiconductor Inc. Icheon Gyeonggi 17336 Republic of Korea
Department of Physics Jeonbuk National University Jeonju 54896 Republic of Korea<?vsp 6pt?>
References
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