Three-Dimensional Simulation of Metal-Semiconductor-Metal Photodetectors Based InAlAs/InGaAs
Source abstract
Abstract
Interdigitated metal–semiconductor–metal (MSM) photodetectors based on InAlAs/InGaAs materials have received considerable attention for applications in high-speed optical-fiber communication systems which require efficient light detection in the 1.3-1.55 µm range. The performance of thin-film inverted MSM are analyzed and compared to conventional MSM, that was modeled and simulated using Silvaco TCAD (Technology Computer Aided Design) and ATLAS software. We show how the interdigital spacing and thickness of the InGaAs layer influence the impulse response and the associated bandwidth
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Photonic and Optical Devices · Semiconductor Lasers and Optical Devices · Semiconductor Quantum Structures and Devices
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