DataVXAdvanced Materials TechnologiesPaper
journal article·2016-07Open access

Charge Injection: Asymmetric Split‐Gate Ambipolar Transistor and Its Circuit Application to Complementary Inverter (Adv. Mater. Technol. 4/2016)

Hocheon Yoo, Edsger C. P. Smits, Albert J. J. M. van Breemen, Jan‐Laurens P. J. van der Steen, Fabrizio Torricelli, Matteo Ghittorelli, Jiyoul Lee, Gerwin H. Gelinck, Jae‐Joon Kim

Advanced Materials Technologies· Volume 1· Issue 4
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Source abstract

Abstract

In article number 1600044, Jiyoul Lee, Gerwin H. Gelinck, Jae-Joon Kim, and co-workers present a novel ambipolar split-gate thin-film transistor (TFT). Depending on the bias voltage at the side-gate, an ambipolar TFT can operate as an either p-type or n-type device selectively. A complementary inverter based on ambipolar split-gate TFTs is demonstrated, which shows the higher noise margin and DC-gain.
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Research context

Electronic materials

OpenAlex topics: Thin-Film Transistor Technologies · Advancements in Semiconductor Devices and Circuit Design

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Affiliations

Department of Creative IT Engineering Pohang University of Science and Technology (POSTECH) Pohang 790‐784 Korea

Holst Centre TNO‐The Dutch Organization for Applied Scientific Research High Tech Campus 31 5656 AE Eindhoven The Netherlands

Department of Information Engineering University of Brescia via Branze 38 25123 Brescia Italy

Department of Graphic Arts Information Engineering Pukyong National University 365 Sinseron‐ro Nam‐gu Busan 608‐739 Korea

Department of Applied Physics Eindhoven University of Technology P.O. Box 513 5600 MB Eindhoven The Netherlands

References

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