Nonvolatile Memory: Phase‐Separated, Printed Organic Thin‐Film Transistor‐Based Nonvolatile Memory with Enhanced Data Retention (Adv. Mater. Technol. 7/2020)
Source abstract
Abstract
In article number 2000228, Jimin Kwon, Sungjune Jung and co-workers present flexible organic transistor nonvolatile memory with prolonged data retention. In the printed device a phase-separated tunneling polymer layer is introduced between charge storage and channel layers, which results in significantly enhanced data retention characteristic over 10 years. The study demonstrates the feasibility of the flexible printed memory into emerging applications in wearable electronics and smart Internet-of-Things devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials
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Affiliations
Department of Creative IT Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam‐Ro, Nam‐Gu Pohang 37673 Korea
Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) 77 Cheongam‐Ro, Nam‐Gu Pohang 37673 Korea
References
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