Resistive Switching: Cycling‐Induced Degradation of Organic–Inorganic Perovskite‐Based Resistive Switching Memory (Adv. Mater. Technol. 1/2019)
Source abstract
Abstract
In article number 1800238, Zhongqiang Wang, Haiyang Xu, and co-workers describe the endurance degradation of CH3NH3PbI3-based RRAM. The degradation is attributed to the excessive defect accumulation during cycling operation. During the reset process, a negative set event is observed to accelerate the endurance degradation rate. Moreover, the decrease of transition voltages suggests a reduction of the migration barrier of iodine vacancies with cycling operation.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Conducting polymers and applications · Transition Metal Oxide Nanomaterials
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Affiliations
Centre for Advanced Optoelectronic Functional Materials Research Key Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University) Ministry of Education 5268 Renmin Street Changchun 130000 China
Department of Architectural Engineering Qingdao Huanghai University 1145 Linghai Road, The West Coast New Area Qingdao 266427 China
References
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