Thin‐Film Piezoelectric‐On‐Silicon Resonators: A Comprehensive Review
Source abstract
Abstract
ABSTRACT Thin‐film piezoelectric‐on‐silicon (TPoS) resonators have attracted extensive attention in the MEMS field in recent years due to their high quality factor (Q), compact size, low power consumption, and excellent compatibility with CMOS processes. They have become an important supplement and development direction to traditional acoustic resonators. This review provides a comprehensive overview of the operating principles of TPoS resonators, common vibration modes, key piezoelectric materials, and Silicon‐On‐Insulator (SOI)/Compensated Silicon‐On‐Insulator (CSOI) fabrication technologies, as well as the impact of different design strategies on device performance. In terms of applications, TPoS resonators have demonstrated outstanding performance in oscillators, filters, and various high‐sensitivity sensors. They are suitable for high‐frequency communication, precision measurement, and environmental monitoring, with strong potential for integration and commercialization. However, several technical challenges remain, including spurious mode suppression, temperature drift control, and packaging reliability. Future research is expected to focus on the introduction of new materials, mode optimization, advanced packaging technologies, and applications in 5G/6G communication and harsh environments. Thin‐film piezoelectric‐on‐silicon (TPoS) resonators have emerged as a key technology in microelectromechanical systems (MEMS), offering high Q, low motional resistance, compact size, and Complementary Metal Oxide Semiconductor (CMOS) compatibility.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Acoustic Wave Resonator Technologies · Advanced Sensor and Energy Harvesting Materials · Mechanical and Optical Resonators
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Microelectronics Shanghai University Shanghai China
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