PbZrO3‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage: A Review (Adv. Mater. Technol. 10/2023)
Source abstract
Abstract
Anti-Ferroelectric Materials Anti-ferroelectric materials have attracted attention of researchers due to their high energy storage density. Article number 2202044 by Xianwei Wang and co-workers reviews the recent progress of PZ-based anti-ferroelectric films for energy storage, and provides various ways, such as element modification, composite materials, and process improvement, to improve their energy storage density. The problems and future development directions of the PbZrO3-based films are raised.
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Research context
OpenAlex topics: Engineering Applied Research · Industrial Technology and Control Systems
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Affiliations
Laboratory of Functional Materials School of Physics Henan Key Laboratory of Photovoltaic Materials Henan Normal University Xinxiang 453007 P. R. China
Laboratory of Dielectric Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 P. R. China
References
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