Fully Flexible Crossbar Memristor Arrays Using BaTiO ₃ –Polyvinyl Alcohol Hybrid Ink

Abstract Inorganic oxide‐based perovskites are recognized as efficient switching materials due to their oxygen anionic conduction, high dielectric constant, and ambient stability. However, their rigid crystal structure limits use in flexible electronics. This study presents a fully flexible crossbar memristor array using hybrid ink of inorganic BaTiO ₃ (BTO) nanoparticles and organic polymer polyvinyl alcohol (PVA) in a 1:15 wt% ratio. The 6 × 6 memristor array was fabricated on indium tin oxide (ITO)‐coated polyethylene terephthalate substrate, where the ITO bottom electrode was patterned by photolithography, followed by screen printing of the BTO–PVA layer and nickel top electrode deposition via sputtering. The devices showed stable bipolar resistive switching with low SET/RESET voltages (1.70 V/–1.75 V), high ON/OFF ratio (~10⁴), excellent endurance (〉10⁶ s), and minimal variability. Mechanical robustness was tested by bending to radii of 19.1 mm, 9.5 mm, and 6.4 mm; ON/OFF ratio stayed ~10⁴, SET/RESET voltages shifted ≤26%, with slight current‐noise increase (maximum standard deviation of 1.29 at 〈0.3 V). Switching was trap‐controlled: BTO provided traps, PVA enabled hopping transport, flexibility, and high resistance states. Conductance‐based color mapping of a bent 6 × 6 array confirmed reliable switching, supporting BTO–PVA hybrid ink as a robust, flexible memory platform.