Non‐Contact, Non‐Contamination, and High‐Resolution Electrostatic Imaging with Floating‐Extended‐Gate Organic Field‐Effect Transistors

Abstract Static electricity can cause severe industrial issues, particularly in electronics manufacturing, where electrostatic discharge leads to component failures. Detecting static marks—densely mixed positive and negative charges—is challenging due to their submillimeter scale. Conventional electrostatic imaging methods have insufficient spatial resolution or contamination issues. In this study, a high‐resolution (36.3 dpi), non‐contamination, and non‐contact electrostatic imaging system using a 1D array of 128 floating extended gate organic field‐effect transistors (FEG‐OFETs) printed on a flexible substrate is presented. The system scans static electricity distributions by moving the sensor array over the target surface, enabling quantitative measurement of local charge and electric flux densities. Imaging static marks as fine as 1 mm on polyethylene terephthalate films is demonstrated. The FEG‐OFET array also exhibits high sensitivity, stability, and reproducibility. This approach eliminates sample contamination and is adaptable for quality control in semiconductor and printed circuit board manufacturing. The results highlight the potential of FEG‐OFET‐based sensors for real‐time, high‐resolution electrostatic imaging applications.