journal article·2025-05

Noise‐Reduced WSe 2 Phototransistors for Enhanced Photodetection Performance via Suppression of Metal‐Induced Gap States

Sunggyu Ryoo, Jinwoo Sim, Seungjun Jeong, Juntae Jang, Jaeyong Woo, Jaehyoung Park, Seongmin Ko, Yeeun Kim, Youngmin Song, Jongeun Yoo, Heebeom Ahn, Keehoon Kang, Daeheum Cho, Kyungjune Cho, Takhee Lee

Advanced Materials Technologies· Volume 10· Issue 9
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Abstract

Abstract Phototransistors are critical components in optoelectronics, and 2D transition metal dichalcogenides (TMDC), such as tungsten diselenide (WSe 2 ), show promise for phototransistor applications due to their strong light‐matter interaction, unique excitonic properties, and high surface‐to‐volume ratio. In 2D TMDC‐based phototransistors, 1/f noise, caused by complex defect states, acts as a dominant low‐frequency noise (LFN) and is crucial for obtaining accurate photodetection characteristics. However, many studies still overlook LFN and focus on enhancing photocurrent or response time. In this study, the importance of LFN analysis is highlighted in WSe 2 phototransistors and demonstrate reduced noises and enhanced photodetection performance through the suppression of metal‐induced gap states (MIGS) that act as noise sources by utilizing semimetal bismuth (Bi) contact. The WSe 2 phototransistors demonstrated ≈1000 times lower noise, 100 times higher responsivity, and 10 times higher specific detectivity than devices with conventional metal contacts. The results of this study suggest that reducing LFN in photodetection devices, such as by suppressing MIGS, can be an efficient way to enhance device performance.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics and Astronomy and Institute of Applied Physics Seoul National University Seoul 08826 South Korea

Department of Chemistry and Green‐Nano Materials Research Center Kyungpook National University Daegu 41566 South Korea

Department of Materials Science and Engineering and Research Institute of Advanced Materials Seoul National University Seoul 08826 South Korea

Department of Materials Science & Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 0FS UK

Department of Materials Science and Engineering Research Institute of Advanced Materials Institute of Applied Physics Seoul National University Seoul 08826 South Korea

Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 USA

Convergence Research Center for Solutions to Electromagnetic Interference in Future‐Mobility Korea Institute of Science and Technology Seoul 02792 South Korea

Funding

National Research Foundation of Korea · National Research Council of Science and Technology

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