journal article·2025-04Open access

Amorphous GaOx Thin Films Grown by MOCVD for Broadband Ultraviolet Absorption Application

Chuang Zhang, Song Qi, Jierui Xue, Jiahe Cao, Zhigao Xie, Yimin Liao, Yan Wang, Hanzhao Song, Andeng Qu, Guofeng Hu, Zengxia Mei, Weihua Tang, Chee‐keong Tan

Advanced Materials Technologies· Volume 10· Issue 7

Abstract

Abstract Gallium oxide (Ga₂O₃), with its wide bandgap of 4.3–5.4 eV and tunable properties, holds great potential for applications in power electronics, solar‐blind photodetectors (PDs), and transparent conductive oxides, particularly effective in the 230–280 nm range for solar‐blind detectors. In contrast, amorphous gallium oxide (a‐GaOx) is gaining attention for UV PDs and flexible X‐ray detectors due to its straightforward synthesis. However, its effective utilization requires a deeper understanding of its chemical, structural, and optical properties. In this study, a‐GaOx is synthesized using metal–organic chemical vapor deposition (MOCVD) at a reduced oxygen flow rate. X‐ray photoelectron spectroscopy revealed that Ga₂O can constitute over 30% of the thin film at high trimethylgallium (TMGa) flux, coexisting with Ga₂O₃ and exhibiting an optical bandgap ≈3.3 eV. Notably, a metal‐semiconductor‐metal photodetector fabricated from this a‐GaOx thin film demonstrated potential as a novel broadband ultraviolet (BUV) absorption material, effectively covering the 254 to 360 nm range.
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Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · GaN-based semiconductor devices and materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Advanced Materials Thrust Function Hub Hong Kong University of Science and Technology (Guangzhou) Nansha Guangzhou 511466 China

Beijing University of Posts and Telecommunications Beijing 100876 China

Innovation Center for Gallium Oxide Semiconductor (IC‐GAO) College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing 210023 China

Frontier Research Center Songshan Lake Materials Laboratory Dongguan Guangdong 523808 China

Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Hong Kong 999077 China

Guangzhou Municipal Key Laboratory of Materials Informatics The Hong Kong University of Science and Technology (Guangzhou) Guangzhou Guangdong 511453 China

Guangzhou Municipal Key Laboratory of Integrated Circuits Design The Hong Kong University of Science and Technology (Guangzhou) Guangzhou Guangdong 511453 China

Funding

Guangzhou Municipal Science and Technology Project · State Administration of Foreign Experts Affairs

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