Stabilizing Lithium Intercalation in MoS 2 for 2H‐to‐1T Phase Transition and Low‐Resistance Edge Contacts
Source abstract
Abstract
Abstract Lithium intercalation in MoS 2 drives the transformation from its semiconducting 2H to metallic 1T/1T’ phase, allowing the fabrication of low‐resistance edge contacts in transistors and diodes. However, due to the presence of chemically reactive lithium, the properties of the resulting Li x MoS 2 are sensitive to processing methods, raising additional concerns about its stability and performance when applied in electronic devices, which have rarely been discussed. Here, the processing method of lithium‐intercalated MoS 2 in n‐butyllithium solution is investigated for optimal edge contact performance in transistors. The stability of Li x MoS 2 when exposed to various solvents, ambient environment (air and vacuum) and thermal stress (from room temperature to 300 °C) is studied in terms of its electrical conductivity and phase ratio. It is found that exposure to water causes immediate degradation of the electrical conductivity of Li x MoS 2 , while under thermal stress, irreversible degradation occurs when the temperature exceeds 150 °C. Therefore, avoiding thermal stress during device fabrication is essential. Following this, an optimal procedure is proposed to fabricate low‐resistance 1T‐Li x MoS 2 edge contacts, achieving a contact resistance of ≈420 Ω µm, which also displays suppressed defect states in edge‐contacted transistors.
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Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology Luoyu Road 1037 Wuhan 430074 China
School of Information Engineering Zhongnan University of Economics and Law Wuhan 430073 China
Funding
National Natural Science Foundation of China
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