Flexible Dual‐Parameter Sensor Array without Coupling Based on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
Source abstract
Abstract
Abstract The skin‐like temperature–pressure sensing capabilities are fundamental features for the next‐generation artificial intelligence applications, such as human–machine interactions and soft robotics. The previous studies on sensing devices have focused on single‐point pressure or temperature sensing, whereas detecting the distributions of pressure and temperature simultaneously still remain challenging. In this article, a flexible dual‐parameter sensor array based on amorphous indium gallium zinc oxide (a‐IGZO) thin film transistors (TFTs) is proposed. In the proposed array, the decoupling of pressure and temperature perceptions is realized by optimizing the combination of MXene and carbon nanotubes in the form of hybrid films based on a difference in the temperature coefficient. The amplification of the sensing signal and scale sensor array is achieved by using the a‐IGZO TFT‐based cross‐active matrix addressing design. After being amplified by TFTs, the pressure and temperature sensors exhibit satisfactory sensitivity. Further, a 7 × 4 pressure array and a 6 × 4 temperature array are alternately integrated on a 5 cm × 5 cm area, thus achieving spatial distribution mapping of the pressure and temperature signals simultaneously without interference. The proposed design has a potential application in the field of multifunctional electronic skin.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · MXene and MAX Phase Materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai 200072 China
Funding
National Natural Science Foundation of China
References (35)
Show source-provided references
1. 10.1002/adom.20180093610.1002/adom.201800936 ↗
2. 10.1002/admt.20180062810.1002/admt.201800628 ↗
3. 10.1002/admt.20180062610.1002/admt.201800626 ↗
4. 10.1021/acsnano.7b0489810.1021/acsnano.7b04898 ↗
5. 10.1002/admt.20160007710.1002/admt.201600077 ↗
6. Zhang Z. · IEEE Electron Device Lett. · 2018 · 40 · 111
7. 10.1038/s41467-017-02685-910.1038/s41467-017-02685-9 ↗
8. 10.1002/adma.20160615110.1002/adma.201606151 ↗
9. 10.1002/aenm.20200194510.1002/aenm.202001945 ↗
10. 10.1039/C9TA00682F10.1039/C9TA00682F ↗
11. 10.1038/ncomms935610.1038/ncomms9356 ↗
12. 10.1038/s41467-018-04906-110.1038/s41467-018-04906-1 ↗
13. 10.1038/s41598-019-50247-410.1038/s41598-019-50247-4 ↗
14. 10.1016/j.nanoen.2017.05.02410.1016/j.nanoen.2017.05.024 ↗
15. 10.1021/acsami.7b0567210.1021/acsami.7b05672 ↗
16. 10.1039/C9TC02832C10.1039/C9TC02832C ↗
17. 10.1002/adma.20130286910.1002/adma.201302869 ↗
18. 10.1002/advs.20180023910.1002/advs.201800239 ↗
19. 10.1038/s41467-017-01136-910.1038/s41467-017-01136-9 ↗
20. 10.1016/j.commatsci.2019.05.05110.1016/j.commatsci.2019.05.051 ↗
21. 10.1016/j.ceramint.2018.07.04510.1016/j.ceramint.2018.07.045 ↗
22. 10.1063/1.173620010.1063/1.1736200 ↗
23. 10.1063/1.295973810.1063/1.2959738 ↗
24. 10.1021/cm500641a10.1021/cm500641a ↗
25. 10.1016/j.nanoen.2020.10492610.1016/j.nanoen.2020.104926 ↗
26. 10.1063/1.233583810.1063/1.2335838 ↗
27. 10.1016/S0040-1951(03)00098-210.1016/S0040-1951(03)00098-2 ↗
28. 10.1109/LED.2018.283959510.1109/LED.2018.2839595 ↗
29. 10.1002/adfm.20170126410.1002/adfm.201701264 ↗
30. 10.1021/acssensors.9b0130810.1021/acssensors.9b01308 ↗
31. 10.1038/srep1150510.1038/srep11505 ↗
32. 10.1038/nmat375510.1038/nmat3755 ↗
33. 10.1889/JSID19.11.82510.1889/JSID19.11.825 ↗
34. 10.1109/JDT.2015.243973710.1109/JDT.2015.2439737 ↗
35. 10.1038/ncomms726910.1038/ncomms7269 ↗