Monolithically Integrated μLEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach
Source abstract
Abstract
Abstract There is a significantly increasing demand on developing a microLED (μLED) based microdisplay which may be the only display system that can meet the requirements for augmented reality/virtual reality systems, helmet mounted displays, and head‐up displays. However, a number of fundamental challenges which cannot be met by any existing technologies need to be overcome before such a microdisplay with satisfied performance becomes possible. In this paper, a different type of integration concept using an epitaxial approach is proposed, aiming to monolithically integrate μLEDs and high electron mobility transistors (HEMTs) on a single chip. This concept can be potentially realized by using a selective epitaxial overgrowth method on a predefined HEMT template featuring microhole masks. Finally, the proposed epitaxial integration concept is translated into a prototype, demonstrating an 8 × 8 microLED microdisplay, where each μLED is electrically driven by an individual HEMT which surrounds its respective μLED via the gate bias of the HEMT.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor Lasers and Optical Devices · Thin-Film Transistor Technologies · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronic and Electrical Engineering The University of Sheffield Mappin Street Sheffield S1 3JD UK
Funding
Engineering and Physical Sciences Research Council
References (36)
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