Room‐Temperature Printing of Ultrathin Quasi‐2D GaN Semiconductor via Liquid Metal Gallium Surface Confined Nitridation Reaction

Abstract Outstanding wide‐bandgap semiconductor material such as gallium nitride (GaN) has been extensively utilized in power electronics, radiofrequency amplifiers, and harsh environment devices. Due to its quantum confinement effect in enabling desired deep‐ultraviolet emission, excitonic impact, and electronic transport features, 2D or ultrathin quasi‐2D GaN semiconductors have been one of the most remarkable candidates for future growth of microelectronic devices. Here, for the first time, the authors report a large area, wide bandgap, and room‐temperature quasi‐2D GaN synthesis and printing strategy through introducing the plasma medicated liquid metal gallium surface‐confined nitridation reaction mechanism. The developed direct fabrication and compositional process is consistent with various electronics manufacturing approaches and thus opens an easy going way for cost‐effective growth of the third‐generation semiconductor. In particular, the fully printed field‐effect transistors relying on the GaN thus made show p‐type switching with an on/off ratio greater than 10⁵, maximum field‐effect hole mobility of 53 cm² V⁻¹ s⁻¹, and a small sub‐threshold swing. As demonstrated, the present method allows to produce at room temperature the GaN with thickness spanning from 1 nanometer to nanometers. This basic method can be further extended, generalized, and utilized for making various electronic and photoelectronic devices in the coming time.