DataVXAdvanced Materials TechnologiesPaper
journal article·2022-06

Ion‐Accumulation‐Induced Charge Tunneling for High Gain Factor in P–I–N‐Structured Perovskite CH3NH3PbI3 X‐Ray Detector

Shanshan Jia, Yingrui Xiao, Mingxin Hu, Xilai He, Nuo Bu, Nan Li, Yucheng Liu, Yunxia Zhang, Jian Cui, Xiaodong Ren, Kui Zhao, Ming Liu, Shubo Wang, Ningyi Yuan, Jianning Ding, Zhou Yang, Shengzhong(Frank) Liu

Advanced Materials Technologies· Volume 7· Issue 6
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Source abstract

Abstract

Abstract Lead halide perovskite‐based X‐ray detectors show very promising sensitivity and low detection limit, which can be used for next‐generation, room‐temperature radiation detections. It is interesting to find that the diode‐structured X‐ray detector shows very high photocurrent gain under small reversed bias voltage, which is unusual and should be investigated and understood for better device design. In this regard, a lead halide perovskite‐based X‐ray detector with the p–i–n structure is fabricated and studied. The p–i–n structured device shows abnormal and excellent photoconductor properties with high photocurrent gain factor under reverse bias. Further device simulation reveals that the ion migration and accumulation in the perovskite material are responsible for the large band‐bending at the interface, which may induce charge tunneling to reduce the contact resistance and causes the reverse‐biased device to work as a photoconductor rather than a photodiode. This finding provides a new approach to the understanding and design of high‐performance X‐ray detectors utilizing ionic semiconductors like lead halide perovskites.
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Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology Institute for Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 China

School of Microelectronics and State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an 710049 China

School of Materials Science and Engineering Jiangsu Collaborative Innovation Center for Photovoltaic Science and Engineering Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology Changzhou University Changzhou 213164 China

Micro/Nano Science and Technology Center Jiangsu University Zhenjiang 212013 China

Dalian National Laboratory for Clean Energy Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China · Shaanxi Normal University · Higher Education Discipline Innovation Project

References (46)

Show source-provided references
1. 10.1021/jz500279b10.1021/jz500279b ↗
2. 10.1126/science.aaa576010.1126/science.aaa5760 ↗
3. 10.1063/1.489905110.1063/1.4899051 ↗
4. 10.1038/nmat427110.1038/nmat4271 ↗
5. 10.1038/ncomms905610.1038/ncomms9056 ↗
6. 10.1002/solr.20190012710.1002/solr.201900127 ↗
7. 10.1038/s41586-018-0576-210.1038/s41586-018-0576-2 ↗
8. 10.1038/s41586-018-0575-310.1038/s41586-018-0575-3 ↗
9. 10.1038/s41566-020-00743-110.1038/s41566-020-00743-1 ↗
10. 10.1016/j.matt.2019.05.00310.1016/j.matt.2019.05.003 ↗
11. 10.1002/adma.20160123510.1002/adma.201601235 ↗
12. 10.1002/adfm.20180178210.1002/adfm.201801782 ↗
13. 10.1016/j.solmat.2018.08.00910.1016/j.solmat.2018.08.009 ↗
14. 10.1126/sciadv.aay081510.1126/sciadv.aay0815 ↗
15. 10.1039/C8TC01564C10.1039/C8TC01564C ↗
16. 10.1038/s41566-017-0012-410.1038/s41566-017-0012-4 ↗
17. 10.1038/nphoton.2017.9410.1038/nphoton.2017.94 ↗
18. 10.1038/s41566-020-0678-x10.1038/s41566-020-0678-x ↗
19. 10.1038/s41566-019-0466-710.1038/s41566-019-0466-7 ↗
20. 10.1038/nphoton.2015.8210.1038/nphoton.2015.82 ↗
21. 10.1038/nphoton.2017.4310.1038/nphoton.2017.43 ↗
22. 10.1038/nmat492710.1038/nmat4927 ↗
23. 10.1002/adma.20190440510.1002/adma.201904405 ↗
24. 10.34133/2020/595824310.34133/2020/5958243 ↗
25. 10.1016/j.jechem.2020.02.04910.1016/j.jechem.2020.02.049 ↗
26. 10.1038/s41467-020-16034-w10.1038/s41467-020-16034-w ↗
27. 10.1002/adom.20190049110.1002/adom.201900491 ↗
28. Neamen D. A. · 2011
29. 10.1016/j.chempr.2019.01.00710.1016/j.chempr.2019.01.007 ↗
30. 10.1021/ic401215x10.1021/ic401215x ↗
31. 10.1021/acsami.9b2315810.1021/acsami.9b23158 ↗
32. NIST Standard Reference Database 8 (XGAM) https://www.nist.gov/pml/xcom-photon-cross-sections-database(accessed: November 2020).
33. 10.1016/j.nima.2006.05.08510.1016/j.nima.2006.05.085 ↗
34. 10.1002/anie.20191128110.1002/anie.201911281 ↗
35. 10.1021/acsami.8b2160510.1021/acsami.8b21605 ↗
36. 10.1021/acsami.8b1859810.1021/acsami.8b18598 ↗
37. 10.1021/acs.jpclett.0c0077010.1021/acs.jpclett.0c00770 ↗
38. 10.1016/j.trechm.2019.04.01010.1016/j.trechm.2019.04.010 ↗
39. 10.1038/s41467-018-07571-610.1038/s41467-018-07571-6 ↗
40. 10.1021/jacs.8b0440510.1021/jacs.8b04405 ↗
41. 10.1038/nmat415010.1038/nmat4150 ↗
42. 10.1038/ncomms1033410.1038/ncomms10334 ↗
43. 10.1021/acsenergylett.6b0006010.1021/acsenergylett.6b00060 ↗
44. 10.1039/C8EE01576G10.1039/C8EE01576G ↗
45. 10.1039/C9CP03548F10.1039/C9CP03548F ↗
46. 10.1109/JPHOTOV.2015.241599710.1109/JPHOTOV.2015.2415997 ↗