journal article·2019-02

Direct Patterning of Piezoelectric Thin Films by Inkjet Printing

Nicolas Godard, Sebastjan Glinšek, Aleksander Matavž, Vid Bobnar, Emmanuel Defay

Advanced Materials Technologies· Volume 4· Issue 2
Publisher page

Abstract

Abstract Inkjet printing is currently gaining momentum as a low‐cost and eco‐friendly additive manufacturing technique for electronics. Patterning of functional metal oxide thin films on high surface energy substrates via inkjet printing remains a challenge and requires assistance from lithographic processes. This work unveils a novel process for lithography and etching‐free patterning of lead zirconate titanate (PZT) films on pristine platinized silicon through the use of inkjet‐printed alkanethiolate‐based templates. The technique requires neither lithography nor etching, respectively, before and after PZT printing. The described process allows for feature sizes in the sub‐100 µm range with control over the thickness of the final film. Inkjet‐printed PZT displays typical ferroelectric and piezoelectric properties of solution‐derived thin films, with remnant polarization 13 µC cm−2, coercive field 58 kV cm−1, permittivity 900, dielectric losses 0.07, and effective longitudinal piezoelectric coefficient 50 pm V−1.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Nanomaterials and Printing Technologies · Electrowetting and Microfluidic Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Luxembourg Institute of Science and Technology rue du Brill 41 4422 Belvaux Luxembourg

Jožef Stefan Institute Jamova cesta 39 1000 Ljubljana Slovenia

Funding

Fonds National de la Recherche Luxembourg · Javna Agencija za Raziskovalno Dejavnost RS

References (36)

Show source-provided references
1. 10.1016/S0924-4247(01)00883-410.1016/S0924-4247(01)00883-4 ↗
2. 10.1016/j.proche.2009.07.29710.1016/j.proche.2009.07.297 ↗
3. 10.1016/j.sna.2005.04.02910.1016/j.sna.2005.04.029 ↗
4. 10.1016/j.sna.2016.09.01210.1016/j.sna.2016.09.012 ↗
5. S.‐Y.Oh S.‐K.Wee M.‐J.Song(Samsung Electronics Co. Ltd.) US8038263B2 2011.
6. 10.1039/C3CS60250H10.1039/C3CS60250H ↗
7. Toray Research Center · 2006
8. 10.1002/adma.20110322810.1002/adma.201103228 ↗
9. 10.1149/2.0071504jss10.1149/2.0071504jss ↗
10. Bathurst S. P. · 2012
11. 10.1021/acs.langmuir.7b0218110.1021/acs.langmuir.7b02181 ↗
12. 10.1109/MEMSYS.2008.444367510.1109/MEMSYS.2008.4443675 ↗
13. 10.1021/cr030078910.1021/cr0300789 ↗
14. O.Machida A.Takeuchi D.Jang R.Tashiro(Ricoh Co. Ltd.) US8888253B2 2014.
15. Lee H. J. · Microsystems Technol. Lab. Annu. Res. Rep. · 2009 · MS15
16. 10.7567/JJAP.51.09LA1110.7567/JJAP.51.09LA11 ↗
17. 10.1021/la026171u10.1021/la026171u ↗
18. 10.1021/la049621m10.1021/la049621m ↗
19. 10.1557/PROC-625-11710.1557/PROC-625-117 ↗
20. 10.1021/la900059m10.1021/la900059m ↗
21. 10.1021/la800711m10.1021/la800711m ↗
22. 10.1039/C6TC01090C10.1039/C6TC01090C ↗
23. 10.1111/j.1551-2916.2010.04211.x10.1111/j.1551-2916.2010.04211.x ↗
24. 10.1016/j.apsusc.2015.11.11810.1016/j.apsusc.2015.11.118 ↗
25. 10.1016/j.cirp.2009.03.01610.1016/j.cirp.2009.03.016 ↗
26. 10.1063/1.351417010.1063/1.3514170 ↗
27. 10.1002/aelm.20150004510.1002/aelm.201500045 ↗
28. 10.1063/1.482194810.1063/1.4821948 ↗
29. 10.1063/1.501956810.1063/1.5019568 ↗
30. 10.1088/0022-3727/45/18/18530210.1088/0022-3727/45/18/185302 ↗
31. 10.1109/LED.2010.205334410.1109/LED.2010.2053344 ↗
32. 10.1023/B:JECR.0000033998.72845.5110.1023/B:JECR.0000033998.72845.51 ↗
33. 10.1111/j.1551-2916.2008.02421.x10.1111/j.1551-2916.2008.02421.x ↗
34. 10.1016/j.jeurceramsoc.2005.09.03710.1016/j.jeurceramsoc.2005.09.037 ↗
35. 10.1016/j.jcis.2015.05.01210.1016/j.jcis.2015.05.012 ↗
36. 10.1021/j100782a02910.1021/j100782a029 ↗