journal article·2023-01

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Zahir Muhammad, Yan Wang, Yue Zhang, Pierre Vallobra, Shouzhong Peng, Songyan Yu, Ziyu Lv, Houyi Cheng, Weisheng Zhao

Advanced Materials Technologies· Volume 8· Issue 2
Publisher page

Abstract

Abstract The aspiration of electronic technologies that are resistant to high‐energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post‐processing after designing, making their structures more complex than the standard systems. Thus, unique designs and strategies are developed to enable the high tolerance of space electronics to radiation in nuclear and avionic applications. The wide bandgap semiconductor (WBG) materials with excellent electronic/optical properties and structural stability are appealing options for radiation‐immune applications. Here, in this article, the development and fabrication of various electronic devices have been reviewed using different wide bandgap materials for radiation‐hardened applications. Detailed investigations are discussed, from the fundamental wide bandgap materials withstanding limited irradiation to the development processes of the electronic devices used in harsh environments. Furthermore, the challenges and future perspectives of the WBG‐based radiation harsh electronic devices are also highlighted in this review with commercial application in space stations and aircraft.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Radiation Effects in Electronics · Ga2O3 and related materials · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Hefei Innovation Research Institute School of Integrated Circuit Science and Engineering Beihang University Hefei 230013 P. R. China

College of Electronic and Information Engineering Shenzhen University Shenzhen 518060 P. R. China

Fert Beijing Institute MIIT Key Laboratory of Spintronics School of Integrated Circuit Science and Engineering Beihang University Beijing 100191 P. R. China

Funding

National Natural Science Foundation of China · Guangdong Provincial Applied Science and Technology Research and Development Program

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