DataVXAdvanced Materials InterfacesPaper
journal article·2023-04Open access

Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type‐I Heterojunction by DFT and the Landauer Approach (Adv. Mater. Interfaces 11/2023)

Oscar A. López‐Galán, Israel Perez, John Nogan, Manuel Ramos

Advanced Materials Interfaces· Volume 10· Issue 11
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Source abstract

Abstract

Van der Waals Heterojunctions In article 2202339, Oscar A. López-Galán and colleagues report a comprehensive study on MoS2/MoSe2 Van der Waals heterojunction. The report suggests that properties of Van der Waals heterojunctions are highly dependent on the equilibrium conditions and their electronic and thermoelectric properties can be tuned accordingly. Furthermore, it suggests that the heterojunction can achieve ballistic transport under an applied biased with potential applications in nano transistors and solar cells.
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Research context

Electronic materials

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Advanced Thermoelectric Materials and Devices

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Affiliations

Institute of Nanotechnology (INT) Karlsruhe Institute of Technology (KIT) Hermann‐von‐Helmholtz‐Platz 1 76344 Eggenstein‐Leopoldshafen Germany

Institute for Applied Materials – Materials Science and Engineering (IAM‐WK) Karlsruhe Institute of Technology (KIT) Engelbert‐Arnold‐Str. 4 D‐76131 Karlsruhe Germany

Consejo Nacional de Ciencia y Tecnología‐Departamento de Física y Matemáticas Instituto de Ingeniería y Tecnología Universidad Autónoma de Ciudad Juárez Avenida del Charro #450, Ciudad Juárez Chihuahua 32310 Mexico

Center for Integrated Nanotechnologies Sandia National Laboratories 1101 Eubank Bldg. SE Albuquerque NM 87110 USA

Departamento de Física y Matemáticas Instituto de Ingeniería y Tecnología Universidad Autónoma de Ciudad Juárez Avenida del Charro #450 N Ciudad Juárez Chihuahua 32310 Mexico

References

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