Optoelectronic Synapses Based on MoS2 Transistors for Accurate Image Recognition (Adv. Mater. Interfaces 32/2022)
Source abstract
Abstract
Opto-Synaptic Devices Artificial optoelectronic synapses based on MoS2 field-effect transistors (FETs) have been implemented by Biying Huang, Na Li, Guangyu Zhang, and colleagues in article number 2201558. In addition to basic opto-synaptic functions and interest-modulate human visual memory, background noise filtering with a high recognition accuracy ≈ 85.5% were realized by integrating the sensing, memorizing, and preprocessing together. This work provides an alternative approach to construct neuromorphic visual systems.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · CCD and CMOS Imaging Sensors
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Affiliations
Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 P. R. China
School of Physical Sciences University of Chinese Academy of Sciences Beijing 100049 P. R. China
Songshan Lake Materials Laboratory Dongguan Guangdong 523808 P. R. China
Institute of Advanced Materials Beijing Normal University Beijing 100875 P. R. China
References
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