Improved Endurance of Ferroelectric Hf_{x}Zr_{1–x}O₂ Integrated on InAs Using Millisecond Annealing (Adv. Mater. Interfaces 27/2022)

Robin Athle; Theodor Blom; Austin Irish; Anton E. O. Persson; Lars‐Erik Wernersson; Rainer Timm; Mattias Borg

doi:10.1002/admi.202270150

journal article·2022-09Open access

Improved Endurance of Ferroelectric Hf_xZr_1–xO₂ Integrated on InAs Using Millisecond Annealing (Adv. Mater. Interfaces 27/2022)

Robin Athle, Theodor Blom, Austin Irish, Anton E. O. Persson, Lars‐Erik Wernersson, Rainer Timm, Mattias Borg

Advanced Materials Interfaces· Volume 9· Issue 27

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Source abstract

Abstract

Improved Endurance of Ferroelectric HfxZr1-xO2 Integrated on InAs The benefits of using a milliseconds flash lamp annealer to crystallize HfxZr1-xO2 into the ferroelectric orthorhombic crystal phase are highlighted in article number 2201038 by Robin Athle, Mattias Borg, and co-workers. By annealing 1000x faster than traditional rapid thermal processing, integration of ferroelectric HfxZr1-xO2 on thermally sensitive substrates such as III-V semiconductors can be achieved. This approach allows for exceptional material integration in emerging memory and neuromorphic applications.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials Materials processing

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Machine Learning in Materials Science

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Affiliations

Electrical and Information Technology Lund University Box 118 Lund 22 100 Sweden

NanoLund, Lund University Box 118 Lund 22 100 Sweden

Division of Synchrotron Radiation Research Lund University Box 118 Lund 22 100 Sweden

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