All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping? (Adv. Mater. Interfaces 10/2022)
Source abstract
Abstract
Charge Transport in Organic Field-Effect Transistors In article number 2101701, Lukas Renn, Thomas Weitz, and co-workers develop organic transistor devices consisting of a monolayer-thin perylene-diimide n-type semiconductor on a rectangular shaped h-BN flake. For some devices the semiconducting film is encapsulated in between h-BN layers by stamping an additional h-BN flake on top. Charge transport measurements show signs of interfacial trapping, despite the trap-free h-BN substrate, suggesting interfacial contaminants are present.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Advancements in Semiconductor Devices and Circuit Design · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
1st Institute of Physics Faculty of Physics Georg‐August‐University Göttingen Germany
AG Physics of Nanosystems Faculty of Physics Ludwig‐Maximilians‐University Munich Germany
Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan
International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan
References
Reference metadata was not supplied for this record.