A Bottom‐Electrode Contact: The Most Suitable Structure for Graphene Electronics (Adv. Mater. Interfaces 6/2022)

A Bottom-Electrode Contact In article number 2102207, Jongin Cha, Jangyup Son, and Jongill Hong investigate the contact resistivity of graphene on Pt as a bottom-electrode in single-layer graphene field-effect transistors. The contact resistivity remains constant with increasing graphene-metal contact width, and it becomes lowest at the Dirac point. These two unique features confirm the presence of high density of states at the Dirac point of the graphene edges, which is attributed to low contact resistivity.